MASK LAYOUT SEPARATION METHOD AND AN OPTICAL PROXIMITY CORRECTION METHOD USING THE SAME, WHICH IS APPLICABLE FOR A DOUBLE PATTERNING TECHNOLOGY PROCESS

摘要

PURPOSE: A mask layout separation method and an optical proximity correction method using the same are provided to improve the critical dimension uniformity of a pattern by adjusting pattern density between a first mask layout and a second mask layout.;CONSTITUTION: A design pattern layout is colored to a plurality of mask layouts(S310). The pattern density difference of each colored mask layout is analyzed(S320). A plurality of mask layouts is stitched(S325). An optical proximity effect correction is applied to a first mask layout(S330). The corrected first mask layout is verified(S340). The combination of the corrected first mask layout and a second mask layout is verified(S350).;COPYRIGHT KIPO 2010