METHOD FOR MANUFACTURING A CMOS IMAGE SENSOR, CAPABLE OF REDUCING CAPACITANCE ON A FLOATING DIFFUSION AREA

摘要

PURPOSE: A method for manufacturing a CMOS image sensor is provided to increase a conversion gain by reducing capacitance on a floating diffusion area and widening the width of a transfer transistor for smoothly transferring electrons on a photo diode area.;CONSTITUTION: A gate electrode of a transfer transistor is formed by interposing a gate insulation layer on a preset area of a semiconductor substrate. A photo diode area is formed on the surface of the semiconductor substrate of one side of the gate electrode. A low density impurity area is formed on the surface of the semiconductor substrate to have a constant space with the gate electrode. An insulation layer sidewall is formed on both sides of the gate electrode. A floating diffusion area(FD) in contact with the low density impurity area is formed on the surface of the semiconductor substrate on the other side of the gate electrode. A P type impurity(3a) is implanted by exposing the floating diffusion area after the floating diffusion area is formed.;COPYRIGHT KIPO 2010