ETCHING SOLUTION FOR SILICON WAFER CONTAINING A CHEMICAL ADDITIVE FOR LOWERING REDUCING POTENTIAL THROUGH REACTION WITH METALLIC ION

摘要

PURPOSE: An etching solution for silicon wafer is provided to reduce metal contamination on a silicon wafer and to perform the etching while not degrading the quality of the semiconductor wafer.;CONSTITUTION: An alkaline etching solution comprises chemical additives. The alkaline etching solution is NaOH or potassium hydroxide. The chemical additive is a chelating agent. The chelating agent is any one selected from EDTA, NTA, HEDTA, GEDTA, TTHA, HIDA, and DHEG. The chemical additive is added in 0.01 g/L ~ 0.4 g/L based on the alkaline etching solution.;COPYRIGHT KIPO 2010