首页> 外国专利> Device for chemically passivating edge defects in silicon solar cells comprises applying a suitable etching solution containing alkaline components, and allowing the reaction to slowly take its course on the edge of the cell

Device for chemically passivating edge defects in silicon solar cells comprises applying a suitable etching solution containing alkaline components, and allowing the reaction to slowly take its course on the edge of the cell

机译:用于化学钝化硅太阳能电池边缘缺陷的装置包括施加包含碱性成分的合适蚀刻溶液,并使反应在电池边缘缓慢进行

摘要

Device for chemically passivating edge defects in silicon solar cells comprises: (i) applying a suitable etching solution containing alkaline components such as KOH to the edge of the cell so that the chemical reaction is limited to a narrow edge region; and (ii) allowing the reaction to slowly take its course on the edge of the cell after applying the etching solution and strongly accelerating using suitable methods. Preferred Features: The etching solution contains e.g. KOH, NaOH, NH4OH, organic lyes e.g. TMAH, cholin, alkaline persulfate solutions e.g. KOH + (NH4)2S2O8, NaOH + (NH4)2S2O8, acids such as HNO3 + HF, HNO3 + HF + CH3COOH, HNO3 + HF + CH3COOH, HNO3 + HF + CH3COOH + HClO4, hydrazine solutions or other known silicon etching solutions.
机译:用于化学钝化硅太阳能电池中的边缘缺陷的装置包括:(i)将合适的包含碱性成分(例如KOH)的蚀刻溶液施加到电池的边缘,以使化学反应限于狭窄的边缘区域; (ii)在施加蚀刻溶液后,使反应在电池的边缘缓慢地进行,并使用适当的方法使其加速。优选的特征:蚀刻溶液含有例如。 KOH,NaOH,NH4OH,有机碱液TMAH,胆碱,碱性过硫酸盐溶液,例如KOH +(NH4)2S2O8,NaOH +(NH4)2S2O8,酸,例如HNO3 + HF,HNO3 + HF + CH3COOH,HNO3 + HF + CH3COOH,HNO3 + HF + CH3COOH + HClO4,肼溶液或其他已知的硅蚀刻溶液。

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