VOLTAGE DRIVING CIRCUIT OF A SEMICONDUCTOR MEMORY DEVICE CAPABLE OF SATISFYING REQUEST FOR HIGH SPEED BY RAPIDLY IMPROVING RESPONSE TIME

摘要

PURPOSE: A current driving circuit of a semiconductor memory device is provided to minimize the current consumption by reducing the number of inverters by odd number.;CONSTITUTION: A precharge unit(40) precharges the power supply. A differential amplifying unit(50) compares the output voltage with the reference potential using the precharge voltage. The differential amplifying unit implements the differential amplifying operation through the result of the comparison. The differential amplifying unit generates the output signal in a drain terminal of a transistor inputting feedback voltage.;COPYRIGHT KIPO 2010