Semiconductor memory device, has refresh request generating circuit with operating speed determined by reference voltage generated by reference voltage generating circuit

摘要

The device uses bias voltage with positive temperature given by a bias circuit (1) and reference voltage generating circuit that is dependant on temperature for giving a reference voltage. A refresh request generating circuit (2) with an operating speed determined by the reference voltage. This circuit performs an oscillation operation and issues a refresh request for a number of times when oscillation is activated.