VERTICAL LIGHT EMITTING DIODE AND A METHOD FOR MANUFACTURING THE SAME, CAPABLE OF IMPROVING THE LIGHT EMITTING EFFICIENCY OF A CHIP BY INCREASING EXTERNAL QUANTUM EFFICIENCY

摘要

PURPOSE: A vertical light emitting diode and a method for manufacturing the same are provided to prevent the lattice defect of a light emitting unit by forming passivation layers on the both end of a substrate before the light emitting unit is formed.;CONSTITUTION: A p-type electrode(250) is formed on a silicon substrate(300). Passivation layers(220) are formed on the both end of the p-type electrode. A light emitting unit(240) is formed by successively depositing an n-type semiconductor layer, an active layer and a p-type semiconductor layer on the p-type electrode. An n-type electrode(260) is formed on a part of the n-type semiconductor layer.;COPYRIGHT KIPO 2010