首页> 外国专利> ALTERNATING CURRENT LIGHT EMITTING DIODE CHIP AND A METHOD FOR MANUFACTURING THE SAME, CAPABLE OF IMPROVING LIGHT EMITTING EFFICIENCY IN AN IDENTICAL LIGHT EMITTING AREA

ALTERNATING CURRENT LIGHT EMITTING DIODE CHIP AND A METHOD FOR MANUFACTURING THE SAME, CAPABLE OF IMPROVING LIGHT EMITTING EFFICIENCY IN AN IDENTICAL LIGHT EMITTING AREA

机译:改变当前发光二极管芯片的制造方法,能够提高同等发光区域的发光效率

摘要

PURPOSE: An alternating current light emitting diode chip and a method for manufacturing the same are provided to effectively emit heat from a light emitting diode by filling metal with superior conductivity to the via hole of a substrate.;CONSTITUTION: A buffer layer(102), a first semiconductor layer(104), an active layer(106) and a second semiconductor layer(108) are formed on the upper side of a first substrate. A reflective film is formed on a part of the second semiconductor layer. A part of the first semiconductor layer is exposed through the second semiconductor layer excluding the reflective film by mesa-etching. An insulator(114) is deposited on the second semiconductor layer excluding the reflective film. A first electrode is deposited on the part of the first semiconductor layer on which the insulator is not deposited. Bonding metal is deposited on the reflective film and the upper part of the first electrode.;COPYRIGHT KIPO 2010
机译:目的:提供一种交流发光二极管芯片及其制造方法,以通过将具有优良导电性的金属填充到基板的通孔中来有效地从发光二极管放热。;构成:缓冲层(102)在第一基板的上侧形成第一半导体层(104),有源层(106)和第二半导体层(108)。反射膜形成在第二半导体层的一部分上。通过台面蚀刻,第一半导体层的一部分通过除了反射膜以外的第二半导体层露出。在除反射膜之外的第二半导体层上沉积绝缘体(114)。在第一半导体层的未沉积绝缘体的部分上沉积第一电极。粘结金属沉积在反射膜和第一电极的上部。; COPYRIGHT KIPO 2010

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