PHASE CHANGE RANDOM ACCESS MEMORY(RAM) DEVICE AND A METHOD FOR MANUFACTURING THE SAME, CAPABLE OF INCREASING THE DENSITY OF PHASE CHANGE RAM CELLS IN AN ACTIVE REGION

摘要

PURPOSE: A phase change RAM device and a method for manufacturing the same are provided to improve the reliability of the device by forming a plurality of phase change RAM cells on a PN diode.;CONSTITUTION: A bar type diode(120) is formed in the active region of a semiconductor substrate(100). A plurality of phase change RAM cells(150) is formed on the diode. A bit-line(BL) is formed on the phase change RAM cells. A word-line(WL) is formed on the upper side of the bit-line to be electrically connected to the active region. An N-type dopant region(110) is formed in the surface of the active region. An ohmic contact layer(125) is formed on the upper side of the diode.;COPYRIGHT KIPO 2010