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Simple and low cost fabrication process of high density vertical Phase-Change Random Access Memory integrated with Electroless Deposition method

机译:结合化学沉积方法的高密度垂直相变随机存取存储器的简单,低成本制造工艺

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Electroless Deposition (ELD) method was developed to fabricate metal nanoplug heater for vertical Phase-Change Random Access Memory (PCRAM) application. We demonstrated a functional vertical PCRAM device with heater diameter size around 9 µm by ELD method without Chemical Mechanical Planarization (CMP) process. It was also demonstrated that even 50 nm and 90 nm metal nanoplug can be easily fabricated by ELD process. Therefore ELD process for metal plug fabrication has great potential for low cost and high density vertical PCRAM application.
机译:开发了化学沉积(ELD)方法来制造用于垂直相变随机存取存储器(PCRAM)应用的金属纳米插头加热器。我们通过ELD方法展示了一种加热器直径大小约为9 µm的功能性垂直PCRAM器件,该器件无需化学机械平坦化(CMP)工艺。还证明了通过ELD工艺甚至可以容易地制造甚至50nm和90nm的金属纳米塞。因此,用于金属插头制造的ELD工艺具有低成本和高密度垂直PCRAM应用的巨大潜力。

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