METHOD FOR MANUFACTURING A PHASE CHANGE RANDOM ACCESS MEMORY, CAPABLE OF MINIMIZING THE DAMAGE OF A CONTACT PLUG IN AN ACTIVE REGION

摘要

PURPOSE: A method for manufacturing a phase change random access memory is provided to reduce the damage due to an etching process by etch-backing a part of a word-line contact plug to a thickness direction and subsequently forming an insulation layer to fill the etch-backed work-line contact plug.;CONSTITUTION: A diode(120) is formed in the first insulation layer(110) of a semiconductor substrate. A protective layer is formed on the diode and the first insulation layer. A contact plug(140) is formed in the protective layer and the first insulation layer. The upper side of the contact plug is etched to a thickness direction. A second insulation layer(150) is formed on the etched contact plug. A phase change random access memory cell(200) which contacts the diode is formed on the semiconductor substrate.;COPYRIGHT KIPO 2010