METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, CAPABLE OF PERFORMING FIRST AND SECOND PLASMA PROCESSES IN THE SAME CHAMBER WITH IN-SITU

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the decrease of nitrogen density in a nitrified gate insulation layer by removing a nitrogen element with an unstable coupling state inside the nitrified gate insulation layer.;CONSTITUTION: A gate insulation layer is formed on a substrate(11). Nitrogen layer is implanted into a gate insulation layer(12B). A nitrogen element with an unstable coupling state is removed inside a gate insulation layer in the same chamber. A gate electrode is formed on the gate insulation layer.;COPYRIGHT KIPO 2010