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TRANSISTOR AND THE MANUFACTURING METHOD THEREOF FOR IN ADVANCE PREVENTING THE SHORT PHENOMENON THAT IT IS BURIED WITH THE METAL MATERIAL AND VOID CAN GENERATE
TRANSISTOR AND THE MANUFACTURING METHOD THEREOF FOR IN ADVANCE PREVENTING THE SHORT PHENOMENON THAT IT IS BURIED WITH THE METAL MATERIAL AND VOID CAN GENERATE
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机译:晶体管及其制造方法可预先防止金属材料渗入空洞而产生短时现象
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摘要
PURPOSE: It improves the profile of the gate electrode and transistor and manufacturing method thereof improve the gap fill performance of the interlayer insulating film formed on the top. The generation of the void is prevented.;CONSTITUTION: A layer of conductive material(105) is formed on the semiconductor substrate(101). A lattice damage layer(107) damaging lattice is formed about a part thickness of the layer of conductive material. The gate electrode having the level difference in the lattice damage layer and side the layer of conductive material is patterned is formed. The source/drain is formed based on the gate electrode within the semiconductor substrate of the either side.;COPYRIGHT KIPO 2010
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