PLASMA ETCHING APPARATUS FOR ETCHING A WAFER, CAPABLE OF ELIMINATING THIN FILM OR PARTICLES FORMED ON THE EDGE REGION OF A WAFER

摘要

PURPOSE: A plasma etching apparatus is provided to reduce a cost for installing facilities by regulating the etching rate of a wafer without the change of an etching machine.;CONSTITUTION: A gas distribution plate(250) divides and supplies reactive gas and non-reactive gas. A substrate supporting stand(240) is installed on the lower side of the gas distribution plate and supports the substrate. An upper electrode assembly(210) is installed on the outer peripheral part of the gas distribution plate and generates plasma. A lower electrode assembly(220) is installed on the outer peripheral part of the substrate supporting stand and generates plasma.;COPYRIGHT KIPO 2010