SEMICONDUCTOR DEVICE INCLUDING AN EMBEDDED GATE AND A METHOD FOR MANUFACTURING THE SAME, CAPABLE OF PREVENTING THE DETERIORATION OF THE EMBEDDED GATE WHICH IS CONTACT WITH AN ELEMENT ISOLATION FILM

摘要

PURPOSE: A semiconductor device including an embedded gate and a method for manufacturing the same are provided to prevent the oxidation of the embedded gate generated during an interlayer insulating film formation process by forming an anti-oxidation film at a lower temperature than temperature at which the interlayer insulating film is formed.;CONSTITUTION: An active region(53) is defined by an element isolation film(52) in a semiconductor substrate(51). The active region and the element isolation film are etched to form a trench(55). An embedded gate(58) and the trench are partially embedded. An interlayer insulating film(60A) is formed on the embedded gate. An anti-oxidation film(57B) is formed between the embedded gate and the element isolation film.;COPYRIGHT KIPO 2011