DEVICE ISOLATION FILM STRUCTURE, A FORMING METHOD THEREOF, A SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND A MANUFACTURING METHOD THEREOF CAPABLE OF PREVENTING THE OXIDATION OF A METAL GATE ELECTRODE

摘要

PURPOSE: A device isolation film structure, a forming method thereof, a semiconductor device including the same, and a manufacturing method thereof are provided to reduce oxygen penetrating through a metal gate electrode by forming a nitride layer on the upper side of an oxide layer.;CONSTITUTION: A first device isolation film pattern(125) includes oxide and fills the lower side of a trench(110) on the substrate. A sidewall oxide layer is formed on the sidewall of the trench. A second device isolation film pattern(135) fills the remaining part of the trench. The second device isolation film pattern includes nitride.;COPYRIGHT KIPO 2013