首页> 外国专利> RESISTIVE MEMORY DEVICE INCLUDING A VARIABLE MEMORY CELL ARRAY SERIALLY CONNECTED TO A VARIABLE RESISTOR AND A SWITCHING DEVICE, A MEMORY SYSTEM INCLUDING THE SAME, AND A METHOD FOR INPUTTING AND OUTPUTTING DATA

RESISTIVE MEMORY DEVICE INCLUDING A VARIABLE MEMORY CELL ARRAY SERIALLY CONNECTED TO A VARIABLE RESISTOR AND A SWITCHING DEVICE, A MEMORY SYSTEM INCLUDING THE SAME, AND A METHOD FOR INPUTTING AND OUTPUTTING DATA

机译:包括串联连接到可变电阻器和开关设备的可变存储器单元阵列的电阻式存储器设备,包括相同存储器的存储器系统以及用于输入和输出数据的方法

摘要

PURPOSE: A resistive memory device, a memory system including the same, and a method for inputting and outputting data are provided to improve the reliability of a memory cell by limiting the size of a voltage of a bit line and controlling the size of a sensing reference voltage.;CONSTITUTION: An output circuit(1100) senses a sensing output voltage by sensing and comparing the voltage of a bit line in a write operation mode. An output circuit amplifies and outputs the voltage of the bit line in a read operation mode. An input circuit(1200) limits the size of the voltage of the bit line by responding to the sensing output voltage. The input circuit provides input data to the variable resistance memory cell array. A unit memory cell comprising a variable resistance memory cell array(1700) is serially connected to one variable resistance device and one switching device.;COPYRIGHT KIPO 2011
机译:目的:提供一种电阻存储装置,包括该电阻存储装置的存储系统以及用于输入和输出数据的方法,以通过限制位线的电压大小并控制感测的大小来提高存储单元的可靠性。组成:输出电路(1100)通过在写操作模式下感测和比较位线的电压来感测感测的输出电压。输出电路在读取操作模式下放大并输出位线的电压。输入电路(1200)通过响应感测输出电压来限制位线的电压大小。输入电路将输入数据提供给可变电阻存储单元阵列。包括可变电阻存储单元阵列(1700)的单位存储单元串联连接到一个可变电阻器件和一个开关器件。; COPYRIGHT KIPO 2011

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