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RESISTIVE MEMORY DEVICE INCLUDING A VARIABLE MEMORY CELL ARRAY SERIALLY CONNECTED TO A VARIABLE RESISTOR AND A SWITCHING DEVICE, A MEMORY SYSTEM INCLUDING THE SAME, AND A METHOD FOR INPUTTING AND OUTPUTTING DATA
RESISTIVE MEMORY DEVICE INCLUDING A VARIABLE MEMORY CELL ARRAY SERIALLY CONNECTED TO A VARIABLE RESISTOR AND A SWITCHING DEVICE, A MEMORY SYSTEM INCLUDING THE SAME, AND A METHOD FOR INPUTTING AND OUTPUTTING DATA
PURPOSE: A resistive memory device, a memory system including the same, and a method for inputting and outputting data are provided to improve the reliability of a memory cell by limiting the size of a voltage of a bit line and controlling the size of a sensing reference voltage.;CONSTITUTION: An output circuit(1100) senses a sensing output voltage by sensing and comparing the voltage of a bit line in a write operation mode. An output circuit amplifies and outputs the voltage of the bit line in a read operation mode. An input circuit(1200) limits the size of the voltage of the bit line by responding to the sensing output voltage. The input circuit provides input data to the variable resistance memory cell array. A unit memory cell comprising a variable resistance memory cell array(1700) is serially connected to one variable resistance device and one switching device.;COPYRIGHT KIPO 2011
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