METHOD FOR MANUFACTURING A NONVOLATILE MEMORY DEVICE, CAPABLE OF PREVENTING THE DEFORMATION OF A PATTERN BY SECURING MASKING MARGIN

摘要

PURPOSE: A method for manufacturing a nonvolatile memory device is provided to prevent the deterioration of sheet resistance of a floating gate by suppressing a top CD loss of the floating gate.;CONSTITUTION: A first conductive layer(303) for a floating gate is formed on the upper side of a substrate(301). A second conductive layer(305) for a control gate and a charge blocking layer are formed on a structure including the first conductive layer. An etching mask pattern(306) is formed on the second conductive layer. A passivation layer(307) is formed on the sidewall of the second conductive layer. The charge blocking layer and the first conductive layer are etched.;COPYRIGHT KIPO 2011