ZIRCONIA THIN FILM DEPOSITION METHOD WHICH IMPROVES THE THIN FILM PROPERTY BY ADJUSTING THE VOLUME RATIO OF OXYGEN GAS TO NITROGEN GAS

摘要

PURPOSE: A zirconia thin film deposition method is provided to be used for dielectric layer of a semiconductor and an active layer of a display by improving the dielectric constant and refractive index by adjusting the volume ratio of oxygen gas to the nitrogen gas which are injected into a chamber.;CONSTITUTION: A board heating heater(13), a substrate holder(7), a shutter(11), and a zirconium target(3) are installed in the pre-processing of zirconia thin film deposition. A substrate(10) is cleansed with the nitrogen gas after cleansing with deionized water after cleansing in the ultrasonic cleaner for 15 minutes by using the ethanol in order to eliminate the organic and the inorganic substance present on the surface of substrate.;COPYRIGHT KIPO 2011