BIASED, TRIPLE-WELL FULLY DEPLETED SOI STRUCTURE, AND VARIOUS METHODS OF MAKING AND OPERATING SAME

摘要

in accordance with one embodiment of the invention the device is a bulk substrate (30A), insulating buried layer (30B), and an active layer (30C) containing a silicon-on-insulator and comprises a substrate 30 formed on the transistor 32, the bulk substrate (30A) has a first dopant material is doped first well 50 is formed and, the first well (50) has a second dopant material of opposite type of the first dopant material is doped. The apparatus further comprises a second well (52) formed in the first well (50) of said bulk substrate (30A), the transistor 32 is formed on the active layer (30C) of the upper part of the second well (52) and, also the device further comprises electrical contacts 62 for the electrical contact 60 and the second well 52 for the first well (50). According to one embodiment of the invention, the bulk substrate (30A), the oxide buried layer (30B) and the active layer (30C) containing a silicon-on-insulator substrate 30 is provided a method of forming a transistor (32) formed on and , the bulk substrate (30A) is doped with the first dopant material. The method includes forming a first well 50 in the bulk substrate (30A) by performing a first ion implant process using a dopant material of a second type opposite the first dopant material, the first dopant material and using the dopant material of the same type by performing a second ion implantation process to form a second well (52) in the first well 50 in the bulk substrate (30A), said second well (52) the top of the active layer forming a transistor (32) to (30C), and the conductive contacts 60 formed in the first well (50) and forming a conductive contact (62) in the second well (52). The method further comprising the step of forming the source / drain regions, the method comprising a contact well (58) formed in said first well (50) of said bulk substrate (30A), said contact well (58 ) is composed of the second dopant material and the dopant material of the same type and concentration of dopant material of the contact well 58 is higher than the concentration of dopant material in said first well (50).