Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing

摘要

A new floating-body effect in advanced fully-depleted SOI MOSFETs is revealed. Gate tunneling current is responsible for the body charging and may lead to the onset of an abnormal peak in transconductance. This effect occurs even at low drain voltage, is gate area-dependent, and can be modulated by driving the back-gate from weak to strong accumulation. A qualitative analytical model is proposed to explain the experimental enhancement of the transconductance peak and practical implications.