NANOWIRE DEVICE WITH 111 VERTICAL SIDEWALLS AND METHOD OF FABRICATION

摘要

nano-scale device (10, 20, 30, 60) and a method of manufacturing the same (40, 50, 70 ) is 111, the vertical side wall (14a, 22e, 34a, 64a) comprising a nanowire (14, 24, 34, 64) provides. Nano-scale device is a [110] direction in the semiconductor substrate polishing the insulator (12, 22, 32, 62), nanowire, the nanowire (24, 34) in electrical contact against the edge (26, 35) and Terrace. Method (40, 50, 70) is a semiconductor layer (22a, 32a) in the pair of island (22f, 43f) which extend between the nanowires (24, 34) form a (44, 54) insulating the semiconductor substrate in order to semiconductor layer (12a, 22a, 32a, 62a) and etching (42, 52, 72) includes the step. The method 50 includes electrical contacts (26, 36) further to a pair of the electrically conductive material deposited on the island (56) to form a step. Nano -pn diode 60 is the first nano-electrode as a nanowire (64), nanowire 64, the vertical stack of the pn- junctions 66, and the pn- junction 110 on the horizontal flat end It includes an electrode 68, a-nano second. Nano -pn diode 60 may be made of the diode arrays on-insulator semiconductor substrate (62).