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首页> 外文期刊>Journal of Micro/Nanolithography,MEMS and MOEMS >Fabrication of giant magneto resistance sensing devices with vertically grown Co/Cu nanowires on a substrate
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Fabrication of giant magneto resistance sensing devices with vertically grown Co/Cu nanowires on a substrate

机译:在基板上垂直生长的Co / Cu纳米线的巨型磁阻传感设备的制造

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摘要

We describe the fabrication and analysis of a giant magnetonresistance u0001GMRu0002 sensing device with multilayered magnetic nanowiresncontaining alternating ferromagnetic and nonmagnetic layers on a siliconnsubstrate. Multilayered nanowires with Co and Cu layers were verticallyngrown using pulsed electrochemical deposition to control the periodicnstructure of nanolayers in a nanopore template. Lithography-assistedntemplate bonding u0001LATBu0002 was applied to attach a polymer nanoporenmembrane and grow nanowires on silicon and polyimide substrates. Fornmagnetic field sensing, the multilayered nanowires were electrically con-nnected to top and bottom electrodes by overgrowing nanowires, and lowncontact resistance values of GMR sensing devices were achieved. ThenGMR effect was measured with magnetic field changes perpendicularnand parallel to the axis of the nanowires. This simple fabrication processnis highly favorable for the development of nanoscale electronics withnmagnetic nanowires at low cost and would offer large design flexibility
机译:我们描述了一种巨大的磁阻u0001GMRu0002传感设备的制造和分析,该传感器具有在硅基板上包含交替的铁磁层和非磁层的多层磁性纳米线。使用脉冲电化学沉积法垂直生长具有Co和Cu层的多层纳米线,以控制纳米孔模板中纳米层的周期性结构。使用光刻辅助模板键合u0001LATBu0002连接聚合物纳米孔膜并在硅和聚酰亚胺衬底上生长纳米线。对于磁场感应,多层纳米线通过过度生长而电连接到顶部和底部电极,从而实现了GMR感应器件的低接触电阻值。然后通过垂直和平行于纳米线轴的磁场变化来测量GMR效应。这种简单的制造工艺非常有利于低成本开发具有磁性纳米线的纳米级电子产品,并具有较大的设计灵活性。

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