首页> 外国专利> MAGNETO RESISTANCE DEVICE MANUFACTURING METHOD FOR IMPROVING THE IMPEDANCE CHARACTERISTIC OF A GIANT MAGNETO AND MAGNETO RESISTANCE DEVICE THEREOF

MAGNETO RESISTANCE DEVICE MANUFACTURING METHOD FOR IMPROVING THE IMPEDANCE CHARACTERISTIC OF A GIANT MAGNETO AND MAGNETO RESISTANCE DEVICE THEREOF

机译:改善巨型磁石的阻抗特性的磁阻器件制造方法及其磁阻器件

摘要

PURPOSE: A magneto resistance device manufacturing method for improving the impedance characteristic of a giant magneto and magneto resistance device thereof are provided to use a magnetic sensor for a detailed magnetic field and information record medium by improving the impedance characteristic of a giant magneto.;CONSTITUTION: A magneto resistance device is manufactured by ion radiation energy. A frequency is allowed from one mega hertz to ten mega hertz. The ion radiation energy is increased from fifty kilovolts to one hundred kilovolts according to the change of the applied magnetic field. The sensitivity of the magneto resistance device is increased according to the increase of the ion radiation energy. The maximum sensitivity is appeared in five mega hertz. The sensitivity of the magneto resistance device is reduced in case the frequency is over than the five mega hertz.;COPYRIGHT KIPO 2012
机译:目的:提供一种用于改善巨型磁电机的阻抗特性的磁阻装置的制造方法,其磁阻装置用于通过改善巨型磁电机的阻抗特性而将磁传感器用于详细的磁场和信息记录介质。 :磁阻装置是通过离子辐射能制造的。允许的频率从1兆赫兹到10兆赫兹。根据所施加的磁场的变化,离子辐射能从五十千瓦增加到一百千瓦。磁阻装置的灵敏度随着离子辐射能量的增加而增加。最大灵敏度以五兆赫兹出现。如果频率超过5兆赫兹,磁阻装置的灵敏度会降低。; COPYRIGHT KIPO 2012

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