Method for the analysis of impurities using secondary ion mass spectroscopy

摘要

The impurity concentration analysis is initiated using a secondary ion mass spectrometry (SIMS). The impurity concentration analysis process according to the invention is 0.1 cm Resistivity or more, single crystal, the impurity concentration is to prepare the three different kinds or more of silicon standard specimen. Next, using a Fourier transform infrared spectroscopy (FT-IR) was measured each three kinds or more of the impurity concentration in the silicon reference sample to obtain a value for each of the FT-IR measurement. And using a SIMS to measure three kinds or more each of the impurities in the silicon standard sample measured under the same pressure to obtain the SIMS measurements for each. Next, the regression equation derived from the FT-IR measurement with SIMS measurements, measuring the concentration of impurities in the test object through the silicon secondary ion mass spectrometer under the measured pressure to obtain a temporary measure, and from the provisional measurement value and derives the corresponding FT-IR value. According to the present invention it can be obtained using a SIMS reliable results regardless of the concentration of the dopant contained in the silicon in the crystalline state and the silicon, so measuring the concentration of impurities. And the pressure inside the SIMS can obtain reliable results in 7 10 ^-10 Torr.