IMPURITY CONCENTRATION ANALYTICAL METHOD USING A SECONDARY ION MASS SPECTROSCOPY

摘要

PURPOSE: An impurity concentration analytical method using a secondary ion mass spectroscopy is provided to improve reliability regardless of the inside pressure of the secondary ion mass spectroscopy and the crystalline state of silicon.;CONSTITUTION: Resistivity prepares a silicon standard sample more than three different kinds(S310). The impurity concentration within the silicon standard sample more than three kinds is measured by means of Fourier transform infra-red spectroscopy(S320). The SIMS value is measured by a secondary ion mass spectroscopy(S330). The regression equation is from the FT-IR measured value and SIMS measured value(S340). The concentration of the impurity within the checking object silicon is measured and the provisional measured value is detected through SIMS under the measured pressure(S350). The impurity concentration within the checking object silicon is decided(S360).;COPYRIGHT KIPO 2010