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Organic ruthenium compound for chemical vapor deposition, and chemical vapor deposition method using the organic ruthenium compound

机译:用于化学气相沉积的有机钌化合物以及使用该有机钌化合物的化学气相沉积方法

摘要

The present invention provides an organic ruthenium compound for the preparation of a ruthenium thin film or a ruthenium compound thin film by chemical vapor deposition , represented by the following formula , the present invention relates to a group, and norbornyl or arene diene coordination ( ) organic ruthenium compounds of ruthenium . The present invention also riaek Assistant gas without requiring the co-existence of oxygen is , also relates to a handling property , the recycling of organic ruthenium compound having excellent chemical vapor deposition of a liquid at room temperature . ; ( formula one , the substituents of the arene group R 1 ~ R 6 is hydrogen or an alkyl group . Further , R 1 ~ R 6 of the total number of carbon atoms (R 1 + R 2 + R 3 + R 4 + R 5 + R 6 ) is 6 or less .)
机译:本发明提供了一种有机钌化合物,其用于通过化学气相沉积制备钌薄膜或钌化合物薄膜,由下式表示:钌化合物。本发明也不需要氧气共存的辅助助燃气,还涉及处理性能,在室温下具有优异的化学气相沉积性的有机钌化合物的再循环。 ; (式一,芳烃基R 1 〜R 6 的取代基是氢或烷基。此外,R 1 〜R <碳原子总数中的Sub> 6 (R 1 + R 2 + R 3 + R 4 + R 5 + R 6 )为6以下。)

著录项

  • 公开/公告号KR100982109B1

    专利类型

  • 公开/公告日2010-09-14

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20087012637

  • 申请日2007-09-27

  • 分类号C07F15/00;C23C16/18;H01L21/28;H01L21/285;

  • 国家 KR

  • 入库时间 2022-08-21 18:30:50

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