Chemical vapor deposition method using the organic ruthenium compound and the organic ruthenium compound for chemical vapor deposition

摘要

PROBLEM TO BE SOLVED: To provide an organoruthenium compound for chemical vapor deposition, which does not require the coexistence of oxygen conventionally used as a reactant gas, is liquid at ordinary temperature, and is excellent in handleability and recyclability.;SOLUTION: This organoruthenium compound is represented by the chemical formula [R₁ to R₆ which are substituents of the arene group are each H or an alkyl; the total carbon number (R₁+R₂+R₃+R₄+R₅+R₆) of R₁ to R₆ is ≤6], and is used for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method, and in which an arene group and norbornadiene are coordinated to ruthenium.;COPYRIGHT: (C)2008,JPO&INPIT