Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate

摘要

1. A method of growing III nitride semiconductor crystal group, comprising the following steps: preparation of the substrate and the bottom! growing a first III nitride semiconductor crystal groups doped with silicon by using silicon tetrachloride gas as doping gas, on said lower substrate cultivation of vapor! wherein the growth rate of said first semiconductor chip group III nitride is at least 200 m / h and not more than 2000 microns / hr. ! 2. A method of growing the nitride semiconductor crystal Group III of claim 1, wherein said growing step includes the step of growing said first semiconductor crystal Group III nitride hydride vapor phase epitaxy. ! 3. A method of growing the nitride semiconductor crystal Group III of claim 2, wherein said growing step includes the step of growing said first semiconductor crystal Group III nitride at a temperature of at least 1050 ° C and not more than 1300 ° C. ! 4. A method of growing the nitride semiconductor crystal Group III of claim 1, wherein said growing step includes the step of supplying said doping gas to said lower substrate such that the concentration of said silicon in said first group III nitride semiconductor crystal is at least 5 × 1016 cm-3 and not more than 5 × 1020 cm-3. ! 5. A method of growing the nitride semiconductor crystal Group III according to claim 4, wherein said growing step includes the step of supplying said doping gas to said lower substrate such that the concentration