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SPRAYED TARGETS OF HIGHLY PURE ALLOYS ON BASIS OF TRANSITION METALS AND METHOD OF THEIR PRODUCTION

机译:基于过渡金属的高纯合金喷涂靶及其生产方法。

摘要

FIELD: technological processes.;SUBSTANCE: invention relates to the field of production of sprayed metal targets for microelectronics. Method for production of sprayed target on the basis of highly pure transition metal from the following range: titanium, vanadium, cobalt, includes serial deep vacuum refining of highly pure metal-ceramic stock by electronic beam drop remelting to produce bar of highly pure transition metal, formation of target stock in the form of bar by arc vacuum remelting with simultaneous alloying with silicon within the limits of 0.0005-0.15 wt % in vertical crystalliser in process of intense electromagnet mixing of hardening melt, and further produced stock is mechanically treated. Sprayed target of highly pure alloy on the basis of transition metal from the following range: titanium, vanadium, cobalt, contains transition metal and silicon, at the following ratio of specified components, wt %: silicon - 0.005-1.0 and metal from the following range: titanium, vanadium, cobalt - the rest.;EFFECT: improved quality and reliability of barrier and conducting films of disilicides of refractory metals.;3 cl, 1 tbl
机译:技术领域本发明涉及微电子学的喷涂金属靶的生产领域。基于以下范围的高纯度过渡金属生产喷涂靶材的方法:钛,钒,钴,包括通过电子束重熔法对高纯度金属陶瓷原料进行的连续深真空精炼,以生产高纯度过渡金属棒然后,在硬化熔体的强电磁铁混合过程中,通过在立式结晶器中同时在0.0005-0.15 wt%的范围内与硅合金化,通过电弧真空重熔并同时与硅合金化,形成棒状目标原料,并对其进行机械处理。基于以下范围的过渡金属喷涂的高纯度合金靶材:钛,钒,钴,按以下指定成分的比例包含过渡金属和硅,重量百分比:硅-0.005-1.0和以下金属范围:钛,钒,钴-其余;效果:提高了难熔金属硅化物的阻挡层和导电膜的质量和可靠性。; 3 cl,1 tbl

著录项

  • 公开/公告号RU2392685C1

    专利类型

  • 公开/公告日2010-06-20

    原文格式PDF

  • 申请/专利权人 GLEBOVSKIJ VADIM GEORGIEVICH;

    申请/专利号RU20090127338

  • 发明设计人 GLEBOVSKIJ VADIM GEORGIEVICH;

    申请日2009-07-17

  • 分类号H01J37/00;C22C1/02;

  • 国家 RU

  • 入库时间 2022-08-21 18:29:37

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