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Metal capping layer with better etch resistance for copper-based metal regions in semiconductor devices
Metal capping layer with better etch resistance for copper-based metal regions in semiconductor devices
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机译:对半导体器件中的铜基金属区域具有更好的抗蚀刻性的金属覆盖层
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摘要
During the fabrication of expensive metallization systems of semiconductor devices, material degradation of conductive overcoats is significantly reduced by providing a noble metal on exposed surface areas after patterning the corresponding via openings. Thus, well established wet chemical etch chemistries can be used without undesirably contributing to process complexity.
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