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Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices
Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices
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机译:用于半导体器件中基于铜的金属区域具有增强的抗蚀刻性的金属覆盖层
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摘要
During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. In one embodiment, a semiconductor device is provided that includes a metallization system formed above a substrate. The metallization system includes a metal line formed in a dielectric layer and having a top surface. The metallization system also includes a conductive cap layer formed on the top surface. A via extends through the conductive cap layer and connects to the top surface of the metal line. A conductive barrier layer is formed on sidewalls of the via. An interface layer is formed of a noble metal between the conductive cap layer and the conductive barrier layer and between the top surface of the metal line and the conductive barrier layer.
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