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Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices
Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices
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机译:用于半导体器件中的基于铜的金属区域的具有增强的抗蚀刻性的金属覆盖层的制造方法
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摘要
During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. Hence, well-established wet chemical etch chemistries may be used while not unduly contributing to process complexity.
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