首页>
外国专利>
Process for producing silicon single crystal and heavily doped n-type semiconductor substrate
Process for producing silicon single crystal and heavily doped n-type semiconductor substrate
展开▼
机译:单晶硅和重掺杂n型半导体衬底的生产方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method, where a phosphorus concentration [P]L (atoms/cm3) in the silicon melt, a Ge concentration in the silicon monocrystal, an average temperature gradient Gave (K/mm) and a pull speed V (mm/min) are controlled to satisfy a formula (1) as follows, the phosphorus concentration [P] (atoms/cm3) in the silicon monocrystal is 4.84×1019 atoms/cm3 or more and 8.49×1019 atoms/cm3 or less, and the phosphorus concentration [P] (atoms/cm3) and the Ge concentration [Ge] (atoms/cm3) in the silicon monocrystal satisfy a relationship according to a formula (2) as follows while growing the silicon monocrystal. [P]L+(0.3151×[Ge]+3.806×1019)/1.50.5×(Gave/V+43)×1019(1) [Ge]-6.95×[P]+5.90×1020(2).
展开▼
机译:向硅熔体中添加磷(P)和锗(Ge)或向硅/锗熔体中添加磷后,通过切克劳斯基方法从硅熔体中生长出单晶硅,其中磷浓度[P] L(原子/在硅熔体中,将单晶硅中的Ge浓度,平均温度梯度Gave(K / mm)和牵引速度V(mm / min)控制为满足以下式(1),磷浓度单晶硅中的[P](原子/ cm 3)为4.84×1019原子/ cm 3以上且8.49×1019原子/ cm 3以下,磷浓度[P](原子/ cm 3)和Ge浓度[Ge]在使单晶硅生长的同时,单晶硅中的(原子/ cm 3)满足以下根据式(2)的关系。 [P] L +(0.3151×[Ge] + 3.806×1019)/1.5 <0.5×(Gave / V + 43)×1019(1)[Ge] <-6.95×[P] + 5.90×1020(2)。
展开▼