Increasing the integrity of a gate stack with a large ε by the inclusion of a metal covering layer after the deposition

摘要

During a production sequence, for the production of a complex metal gate structure with a large ε, a cover layer, for example a silicon layer, on a metal covering layer in an in - situ - process is deposited, in order thus to improve the integrity of the metal covering layer. The cover layer offers a better integrity during the further processing, for example, for the execution of wet-chemical cleaning processes and the subsequent depositing a silicon gate material.