METHOD FOR MANUFACTURING NITRIDE-BASED COMPOUND SEMICONDUCTOR SUBSTRATE, AND NITRIDE-BASED COMPOUND SEMICONDUCTOR SELF-STANDING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride-based compound semiconductor substrate, by which a nitride-based compound semiconductor layer free from a warp and having little variation in the off-angle in the plane is grown with satisfactory reproducibility, and to provide a nitride-based compound semiconductor self-standing substrate suitable for manufacturing a semiconductor device.;SOLUTION: In the method for manufacturing a nitride-based compound semiconductor substrate, comprising epitaxially growing a nitride-based compound semiconductor layer on a substrate for growth, a rare earth perovskite substrate having a main plane, where the (011) plane is made to incline at an off angle of 0-2°(0° is excepted) in ≈[010] direction, is used as the substrate for growth.;COPYRIGHT: (C)2011,JPO&INPIT