STI SHAPE NEAR FIN BOTTOM OF Si FIN IN BULK FinFET

摘要

PPROBLEM TO BE SOLVED: To provide structures of a semiconductor fin and a fin type field effect transistor, and to provide a method of manufacturing the same. PSOLUTION: A method of forming an integrated circuit structure includes: a step of providing a semiconductor substrate including a top surface; a step of forming a first insulation region and a second insulation region in the semiconductor substrate; and a step of recessing the first insulation region and the second insulation region. Top surfaces of remaining portions of the first insulation region and the second insulation region are flat surfaces or divot surfaces. A portion of the semiconductor substrate between and adjoining removed portions of the first insulation region and the second insulation region forms a fin. PCOPYRIGHT: (C)2011,JPO&INPIT