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METHOD FOR MEASURING FILM THICKNESS OF EPITAXIAL LAYER, METHOD FOR MANUFACTURING EPITAXIAL WAFER, AND METHOD FOR CONTROLLING MANUFACTURING PROCESS OF EPITAXIAL WAFER
METHOD FOR MEASURING FILM THICKNESS OF EPITAXIAL LAYER, METHOD FOR MANUFACTURING EPITAXIAL WAFER, AND METHOD FOR CONTROLLING MANUFACTURING PROCESS OF EPITAXIAL WAFER
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机译:测量外延膜的膜厚的方法,制造外延晶片的方法和控制外延晶片的制造过程的方法
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摘要
PROBLEM TO BE SOLVED: To provide a means to measure the thickness of an epitaxial layer formed on a substrate without depending on substrate resistivity, and polished after the epitaxial layer is formed; and to provide an epitaxial wafer guaranteeing the thickness of the epitaxial layer of a product wafer by the means.;SOLUTION: The method for measuring the film thickness of the epitaxial layer in the manufacturing step of the epitaxial wafer includes forming the epitaxial layer on the surface of a semiconductor wafer by subjecting the semiconductor wafer to the epitaxial growth process. The method includes measuring the thickness A of the semiconductor wafer before the epitaxial growth step, polishing the epitaxial layer formed on the surface of the semiconductor wafer after the epitaxial growth step, measuring the thickness B of the epitaxial wafer obtained after polishing, and computing the thickness of the epitaxial layer as a difference (B-A) between the thickness B and the thickness A. The thickness A and the thickness B are measured by a contactless displacement measuring meter.;COPYRIGHT: (C)2011,JPO&INPIT
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