METHOD OF MANUFACTURING CUBIC SILICON CARBIDE SINGLE-CRYSTAL THIN FILM, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a cubic silicon carbide single-crystal thin film for obtaining a low-cost cubic silicon carbide (3C-SiC) single-crystal thin film, and to provide a semiconductor device.;SOLUTION: The method of manufacturing a cubic silicon carbide single-crystal thin film includes: a first process for forming a sacrifice layer 102 on the surface of a substrate 101; a second process for forming a cubic crystal system semiconductor layer 103 of which at least a surface layer is in a cubic crystal system structure on the surface of the sacrifice layer; a third process for forming a cubic silicon carbide single-crystal layer 104 on the surface of the cubic crystal system semiconductor layer; and a fourth process for separating a laminate of the cubic crystal system semiconductor layer and the cubic silicon carbide single-crystal layer by removing the sacrifice layer by etching.;COPYRIGHT: (C)2011,JPO&INPIT