METHOD OF MANUFACTURING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE SUBSTRATES OBTAINED FROM THE SAME, AND DEVICES MANUFACTURED ON THE SUBSTRATES

摘要

PROBLEM TO BE SOLVED: To provide a method of obtaining bulk mono-crystalline gallium-containing nitride containing ions of Group I metals and ions of an acceptor dopant, substrates for epitaxy made of the same, and devices manufactured on such substrates.;SOLUTION: The method of obtaining bulk mono-crystalline gallium-containing nitride comprises a step of crystallization on a seed of mono-crystalline gallium-containing nitride from a supercritical ammonia-containing solution, wherein at process conditions the molar ratio of acceptor dopant ions to the supercritical ammonia-containing solvent is at least 0.0001. In addition, after the step of crystallization on a seed the method further comprises a step of annealing the nitride at the temperature between 950°C and 1,200°C, preferably between 950°C and 1,150°C.;COPYRIGHT: (C)2011,JPO&INPIT