METHOD OF OBTAINING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, SUBSTRATES MANUFACTURED THEREOF AND DEVICES MANUFACTURED ON SUCH SUBSTRATES

摘要

The invention is related to a method of obtaining bulk mono-crystalline gallium-containing nitride, comprising a step of seeded crystallization of mono-crystalline gallium-containing nitride from supercritical ammonia-containing solution, containing ions of Group I metals and ions of acceptor dopant, wherein at process conditions the molar ratio of acceptor dopant ions to supercritical ammonia-containing solvent is at least 0.0001. According to said method, after said step of seeded crystallization the method further comprises a step of annealing said nitride at the temperature between 950° C. and 1200° C., preferably between 950° C. and 1150° C.;The invention covers also bulk mono-crystalline gallium-containing nitride, obtainable by the inventive method. The invention further relates to substrates for epitaxy made of mono-crystalline gallium-containing nitride and devices manufactured on such substrates.