首页> 外国专利> PLASMA GENERATOR AND FILM FORMING DEVICE, ETCHING DEVICE, SURFACE TREATMENT DEVICE, AND ION IMPLANTATION DEVICE

PLASMA GENERATOR AND FILM FORMING DEVICE, ETCHING DEVICE, SURFACE TREATMENT DEVICE, AND ION IMPLANTATION DEVICE

机译:等离子体发生器和成膜设备,蚀刻设备,表面处理设备和离子注入设备

摘要

PROBLEM TO BE SOLVED: To provide a plasma generator capable of generating lengthy line plasmas with uniformity and a high density; and to provide a film forming device capable of forming film on a large area substrate, an etching device, a surface treatment device, and an ion implantation device, by utilizing the above plasma generator.;SOLUTION: The electron cyclotron resonance line plasma generator includes: a microwave generating source for generating microwaves; a waveguide in which the microwaves generated from the microwave generating source are introduced and which has slits extending in a propagation direction of the microwaves; a chamber to which a plasma generating gas to be made plasmas by microwaves leaking out from the slits through a dielectric window is supplied; and a magnetic field-generating mechanism which applies a magnetic field on the plasma to generate an electron cyclotron resonance in the chamber.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种等离子体发生器,该等离子体发生器能够产生均匀且高密度的长线等离子体。通过使用上述等离子体发生器,提供能够在大面积基板上成膜的成膜装置,蚀刻装置,表面处理装置和离子注入装置。解决方案:电子回旋共振线等离子体发生器包括: :用于产生微波的微波产生源;波导,其中引入了从微波产生源产生的微波,并且具有在微波的传播方向上延伸的狭缝;在该腔室中,设置有通过微波从电介质窗从狭缝泄漏而成为等离子体的等离子体产生气体。 ;以及一种在等离子体上施加磁场以在腔室内产生电子回旋共振的磁场产生机构。;版权所有:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP2011103257A

    专利类型

  • 公开/公告日2011-05-26

    原文格式PDF

  • 申请/专利权人 KOCHI UNIV OF TECHNOLOGY;

    申请/专利号JP20090258405

  • 申请日2009-11-11

  • 分类号H05H1/46;H01L21/205;H01L21/31;H01L21/3065;H01L21/203;C23C14/48;C23C16/511;C23C14/46;H01L21/265;

  • 国家 JP

  • 入库时间 2022-08-21 18:23:34

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