首页> 外国专利> PLASMA GENERATION SOURCE, PLASMA GENERATOR, FILM DEPOSITION DEVICE, ETCHING DEVICE, ASHING DEVICE, AND SURFACE TREATMENT DEVICE

PLASMA GENERATION SOURCE, PLASMA GENERATOR, FILM DEPOSITION DEVICE, ETCHING DEVICE, ASHING DEVICE, AND SURFACE TREATMENT DEVICE

机译:等离子体产生源,等离子体发生器,膜沉积设备,蚀刻设备,灰化设备和表面处理设备

摘要

PROBLEM TO BE SOLVED: To provide a plasma generation source and a plasma generator, capable of stably generating uniform plasma with high density and a large area, a film deposition device utilizing the plasma generator, an etching device and an ashing device, and a surface treatment device.;SOLUTION: The capacity coupling plasma generation source with a magnetic field includes electrodes and magnets, arranged at an upper part of an insulator, and an AC power source connected to the electrodes. The electrode is made of a pair of interdigital electrodes arranged in opposition. The pair of interdigital electrodes, wherein comb tooth-shaped sections are alternately arranged in parallel with each other and the magnets are arranged among the comb tooth-shaped sections, and a plasma generation gas is turned into a plasma by an electric field from the electrodes and a magnetic field from the magnets.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种能够稳定地产生高密度且大面积的均匀等离子体的等离子体产生源和等离子体发生器,利用该等离子体发生器的成膜装置,蚀刻装置和灰化装置以及表面解决方案:解决方案:具有磁场的电容耦合等离子体产生源包括布置在绝缘体上部的电极和磁体,以及连接到电极的交流电源。该电极由一对相对设置的叉指电极制成。一对叉指电极,其中梳齿形部分彼此平行地交替布置并且磁体布置在梳齿形部分之间,并且等离子体产生气体通过来自电极的电场而变成等离子体。以及来自磁铁的磁场。;版权所有:(C)2011,日本特许厅&INPIT

著录项

  • 公开/公告号JP2011138712A

    专利类型

  • 公开/公告日2011-07-14

    原文格式PDF

  • 申请/专利权人 KOCHI UNIV OF TECHNOLOGY;

    申请/专利号JP20090298964

  • 申请日2009-12-28

  • 分类号H05H1/46;H01L21/205;H01L21/31;H01L21/3065;C23C16/503;H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-21 18:25:28

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