In-Ga-Zn-BASED OXIDE SINTERED COMPACT SPUTTERING TARGET AND THIN-FILM TRANSISTOR
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机译:铟镓锌基氧化物烧结溅射靶及薄膜晶体管
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摘要
PROBLEM TO BE SOLVED: To provide a sputtering target composed of a In-Ga-Zn-based oxide sintered compact with which a uniform thin-film transistor panel with large area can be manufactured.;SOLUTION: The oxide sintered compact contains In (indium), Zn (zinc), Ga (gallium), and Sn (tin), and the atomic ratio of Sn (tin) satisfies 0.01Sn/(In+Ga+Zn+Sn)0.10.;COPYRIGHT: (C)2011,JPO&INPIT
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