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METHOD OF MANUFACTURING ALN SINGLE CRYSTAL, AND ALN SINGLE CRYSTAL SUBSTRATE
METHOD OF MANUFACTURING ALN SINGLE CRYSTAL, AND ALN SINGLE CRYSTAL SUBSTRATE
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机译:Aln单晶和Aln单晶基体的制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of manufacturing an AlN single crystal capable of suppressing quality deterioration due to sublimation of a SiC substrate, and a AlN single crystal substrate formed by the method of manufacturing.;SOLUTION: The method of manufacturing an AlN single crystal (a nitride single crystal film 1) comprises: a process of preparing a SiC substrate (a base substrate 9); a process of preparing a (SiC)1-x(AlN)x powder (a raw material mixed powder 5) by mixing a SiC powder and an AlN powder; and a process of forming the nitride single crystal film 1 on one main surface of the base substrate 9 using the raw material mixed powder 5. In addition, SiC may be contained in the AlN single crystal (the nitride single crystal film 1).;COPYRIGHT: (C)2011,JPO&INPIT
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机译:解决的问题:提供一种能够抑制由于SiC衬底的升华而导致的质量劣化的AlN单晶的制造方法,以及通过该制造方法形成的AlN单晶衬底。解决方案:AlN的制造方法单晶(氮化物单晶膜1)包括:制备SiC衬底(基础衬底9)的工艺;通过混合SiC粉末和AlN粉末来制备(SiC) 1-x Sub>(AlN) x Sub>粉末(原料混合粉末5)的方法;以及使用原料混合粉末5在基础基板9的一个主面上形成氮化物单晶膜1的工序。另外,在AlN单晶(氮化物单晶膜1)中可以含有SiC。版权所有:(C)2011,日本特许厅和INPIT
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