SILICON NITRIDE THIN FILM DEPOSITING METHOD, AND SILICON NITRIDE THIN FILM DEPOSITING DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain high surface passivation effect and to shorten a film deposition time, with respect to film depositing processing wherein a silicon nitride thin film is deposited on a semiconductor element by plasma CVD (Chemical Vapor Deposition).;SOLUTION: In a silicon nitride thin film depositing method of depositing a thin silicon nitride (SiN_x) film on a semiconductor surface, plasma is generated by a discharge between flat plate electrodes constituted by arranging a high-frequency electrode and a counter electrode face to face parallel, and thin films composed of two layers are deposited on the semiconductor surface by using the discharge plasma, a thin film of a first layer between the thin films of the two layers is deposited to a film thickness of ≤10 nm at a low speed of ≤60 nm/min, and a thin film of a second layer is deposited to a film thickness of ≥10 nm at a high speed of ≥100 nm/min.;COPYRIGHT: (C)2011,JPO&INPIT