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METHOD AND STRUCTURE FOR ADHESION OF INTERMETALLIC COMPOUND ON COPPER PILLAR BUMP

机译:铜柱形阀体间金属间化合物的粘接方法和结构

摘要

PPROBLEM TO BE SOLVED: To provide a method and structure for good adhesion of intermetallic compounds (IMC) on copper pillar bumps. PSOLUTION: The method includes depositing copper to form a copper pillar layer 108, depositing a diffusion barrier layer 110 on a top of the copper pillar layer, and depositing a copper cap layer 112 on top of the diffusion barrier layer, wherein an intermetallic compound (IMC) 116 is formed among the diffusion barrier layer, the copper cap layer, and a solder layer formed on a top of the copper cap layer. The IMC has good adhesion on the copper pillar structure, the thickness of the IMC is controllable by the thickness of the copper cap layer, and the diffusion barrier layer limits diffusion of copper from the copper pillar layer to the solder layer. The method can further include depositing a thin layer for wettability on top of the diffusion barrier layer prior to depositing the copper cap layer. PCOPYRIGHT: (C)2011,JPO&INPIT
机译:

要解决的问题:提供一种方法和结构,以使金属间化合物(IMC)在铜柱凸块上具有良好的附着力。

解决方案:该方法包括:沉积铜以形成铜柱层108;在铜柱层的顶部上沉积扩散阻挡层110;以及在扩散阻挡层的顶部上沉积铜覆盖层112。金属间化合物(IMC)116形成在扩散阻挡层,铜盖层和形成在铜盖层的顶部上的焊料层之间。 IMC在铜柱结构上具有良好的粘附性,IMC的厚度可由铜盖层的厚度控制,并且扩散阻挡层限制了铜从铜柱层向焊料层的扩散。该方法可以进一步包括在沉积铜盖层之前在扩散阻挡层的顶部上沉积用于润湿性的薄层。

版权:(C)2011,日本特许厅&INPIT

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