首页>
外国专利>
Dynamic temperature control method during microcrystalline SI growth
Dynamic temperature control method during microcrystalline SI growth
展开▼
机译:微晶硅生长过程中的动态温度控制方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention generally comprises a method for dynamically controlling the temperature of a solar cell substrate during microcrystalline silicon deposition. In amorphous silicon/microcrystalline tandem solar cells, microcrystalline silicon may be deposited using a higher power density and to a greater thickness than amorphous silicon. The higher the power density applied, the faster the deposition may occur, but the temperature of the deposition may also increase. At high temperatures, the likelihood of dopant diffusing into the intrinsic layer of the solar cell and damaging the cell is greater. By dynamically controlling the temperature of the susceptor, the substrate and hence, the dopant can be maintained at a substantially constant temperature below the value at which the dopant may diffuse into the intrinsic layer. The dynamic temperature control permits the microcrystalline silicon to be deposited at a high power density without damaging the solar cell.
展开▼