LOW-TEMPERATURE GROWTH OF MICROCRYSTALLINE SILICON USING 100-PERCENT SIH4 BY RF GLOW DISCHARGE METHOD

摘要

The growth of microcrystalline silicon (mu c-Si) films by plasma enhanced chemical vapour deposition (PECVD) of silane in the temperature range 200-500 degrees C has been investigated. The growth system was a capacitively coupled parallel plate radio frequency (rf) glow discharge reactor in which the substrates were mounted on the cathode (powered electrode). It was found that mu c-Si films could be grown using 100% SiH4 at a substrate temperature above 230 degrees C with a high deposition rate and high degree or crystallinity. The main effect of mesh attachment was found to be the reduction of ionic bombardment to the film growth zone which prevents the degradation of surface crystallinity. It was also found that both P- and B-doped mu c-Si films with good optoelectronic properties could be grown using 100% SiH4. [References: 22]