Technique for detecting over-programmed memory cells after programming of adjacent memory cells

摘要

In (system memory or other type of) the memory cell is programmed by changing the threshold voltage non-volatile semiconductor memory system. The timing of the programming for the various memory cells in the system is different due to some memory cells, there is a possibility that the over programming. Thus, for example, there is a possibility that the value or the threshold voltage of the cell has been aimed, deviates from the range that is of interest. Programming for the cell causes the present invention includes determining that the memory cells of adjacent rows to whether or not it has been over programmed.